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| 1988-11-21 | |
| 著作权人 | SHARP KK |
| 专利号 | JP1988059554B2 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser element of high quality by controlling carrier density of a Te-doped N type clad layer. CONSTITUTION:When Te is used as a dopant of an N type GaAlAs clad layer, the function as an effective N type clad layer can be imparted to a crystal layer which has high mixture crystal of a laser element that oscillates a visible light by setting the Te carrier density of a GaAlAs clad layer in the range of 2X10-2X10cm irrespective of the type of the semiconductor matrial of an active layer. In this manner, a semiconductor laser element of a low threshold current having preferable element characteristics can be obtained. |
| 公开日期 | 1988-11-21 |
| 申请日期 | 1982-06-25 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84231]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | -. -. JP1988059554B2. 1988-11-21. |
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