Distributed feedback type semiconductor laser | |
HIRATA SHOJI | |
1991-11-08 | |
著作权人 | SONY CORP |
专利号 | JP1991250686A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Distributed feedback type semiconductor laser |
英文摘要 | PURPOSE:To improve the probability single wavelength oscillation for improvement of the yield by providing a first conductivity type first cladding layer, an active layer, a second conductivity type second cladding layer, and a secondary grating, and further providing a multiple reflection film structure in at least one cladding layer. CONSTITUTION:There are grown on an n-type GaAs substrate 11 a first conductivity type, a first cladding layer 1 comprising an n-type Al0.3Ga0.7As for example, an active layer 2 comprising undoped GaAs, and a second conductivity type guide layer 12 comprising p-type Al0.15Ga0.85As for example by a continuous MOCVD (organic metal chemical vapor growth method), etc. A secondary grating 4 is formed using a two-beam interference exposure process, on which a second conductivity type second cladding layer 3 comprising p-type Al0.3Ga0.7As for example is grown. Further, Al0.1Ga0.9As and AlAs for example are grown alternately with a pitch 1/4 of an in-medium wavelength by a MOCVD, etc., to form a multiple reflection film structure 6. Reflected light from the multiple reflection film structure 6 strongly affects a wavelength mode of the light in the active layer 2 to substantially moderate the influence of the phase of the grating 4 at an end surface 5. |
公开日期 | 1991-11-08 |
申请日期 | 1990-02-28 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/84214] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | SONY CORP |
推荐引用方式 GB/T 7714 | HIRATA SHOJI. Distributed feedback type semiconductor laser. JP1991250686A. 1991-11-08. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论