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	Distributed feedback type semiconductor laser
	HIRATA SHOJI
	1991-11-08
著作权人	SONY CORP
专利号	JP1991250686A
国家	日本
文献子类	发明申请
其他题名	Distributed feedback type semiconductor laser
英文摘要	PURPOSE:To improve the probability single wavelength oscillation for improvement of the yield by providing a first conductivity type first cladding layer, an active layer, a second conductivity type second cladding layer, and a secondary grating, and further providing a multiple reflection film structure in at least one cladding layer. CONSTITUTION:There are grown on an n-type GaAs substrate 11 a first conductivity type, a first cladding layer 1 comprising an n-type Al0.3Ga0.7As for example, an active layer 2 comprising undoped GaAs, and a second conductivity type guide layer 12 comprising p-type Al0.15Ga0.85As for example by a continuous MOCVD (organic metal chemical vapor growth method), etc. A secondary grating 4 is formed using a two-beam interference exposure process, on which a second conductivity type second cladding layer 3 comprising p-type Al0.3Ga0.7As for example is grown. Further, Al0.1Ga0.9As and AlAs for example are grown alternately with a pitch 1/4 of an in-medium wavelength by a MOCVD, etc., to form a multiple reflection film structure 6. Reflected light from the multiple reflection film structure 6 strongly affects a wavelength mode of the light in the active layer 2 to substantially moderate the influence of the phase of the grating 4 at an end surface 5.
公开日期	1991-11-08
申请日期	1990-02-28
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84214]
专题	半导体激光器专利数据库
作者单位	SONY CORP
推荐引用方式 GB/T 7714	HIRATA SHOJI. Distributed feedback type semiconductor laser. JP1991250686A. 1991-11-08.

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