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	Semiconductor device
	MIZUTA MASASHI
	1989-11-30
著作权人	NEC CORP
专利号	JP1989296686A
国家	日本
文献子类	发明申请
其他题名	Semiconductor device
英文摘要	PURPOSE:To prevent the change of an oscillating wavelength due to the change of temperature and refractive index by a method wherein erbuim atoms are doped into silicon of an n-type gallium phosphide/silicon/p-type gallium phosphide double heterojunction formed on a gallium phosphide semiconductor substrate. CONSTITUTION:n-GaP is made to grow on an n-GaP substrate through a molecular ray epitaxial growth method. In this process, Ga and Gp are used as a Ga source and a P source respectively and a Si solid source making use of a Nudesene cell is used for doping. Next, Si is made to grow through an electron beam excitation and concurrently a Si layer is irradiated with erbium to be doped with it. Then, GaP is made to grow again and a Au/Be electrode and a Au/Ge electrode are evaporated on the front and rear of a crystal respectively, which is cleaved. By these processes, the change of an oscillating wavelength due to the change of temperature and refractive index caused by injection of carriers can be prevented.
公开日期	1989-11-30
申请日期	1988-05-25
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84206]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	MIZUTA MASASHI. Semiconductor device. JP1989296686A. 1989-11-30.

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