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	Semiconductor laser element
	KASAI SHUSUKE; HAYASHI HIROSHI; MORIMOTO TAIJI; KANEIWA SHINJI; YAMAGUCHI MASAHIRO
	1989-05-24
著作权人	SHARP KK
专利号	JP1989132191A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser element
英文摘要	PURPOSE:To obtain a semiconductor laser element which is operated stably in a high output state by a method wherein a channel width at least near one end face part of a resonator is formed to be wider as compared with the control part of the resonator in order to suppress a deterioration at an end face of the semiconductor resonator. CONSTITUTION:A channel to be used as a current route is formed in a main part on a substrate 11; multilayer structures 12-16 including an active layer 14 for laser oscillation use are deposited on the substrate 11; a difference in an effective refractive index on the basis of a difference in light absorption by the substrate is provided between the outside and the inside of the channel. In this semiconductor laser element of a refractive-index waveguide type, the active layer 14 is made flat and uniform over its whole face; a channel width W2 in parts A, C at least near end faces of a resonator inside a waveguide route is formed to be wider as compared with a channel width W1 in the central part B of the resonator. For example, an n-GaAs current- blocking layer 12 is deposited on a p-GaAs substrate 11, a groove whose width W2 near an and face is 10mum, whose width W1 in the central part of the resonator is 4mum and whose depth is 1mum is formed; after that, multilayer structures 12-16 are formed.
公开日期	1989-05-24
申请日期	1987-12-29
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84159]
专题	半导体激光器专利数据库
作者单位	SHARP KK
推荐引用方式 GB/T 7714	KASAI SHUSUKE,HAYASHI HIROSHI,MORIMOTO TAIJI,et al. Semiconductor laser element. JP1989132191A. 1989-05-24.

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