QQ客服 官方微博 反馈留言

	Semiconductor laser device
	-
	1975-03-12
著作权人	NIPPON ELECTRIC CO LTD
专利号	GB1386885A
国家	英国
文献子类	授权发明
其他题名	Semiconductor laser device
英文摘要	1386885 Electroluminescence NIPPON ELECTRIC CO Ltd 25 July 1972 [30 July 1971] 34811/72 Heading C4S [Also in Division H1] In a double heterostructure semiconductor laser in which a P-type GaAs active region 12 is located between N- and P-type layers 11 and 13, respectively, an N-type GaAs layer 14 is superimposed on the P-type layer 13, and a narrow stripe P-type region 18 formed by Zener diffusion extends through layer 14 into layer 13, the laser excitation current between the region 18 and an N-type GaAs substrate 10 being confined to the active region area immediately adjacent the stripe region 18 by reason of the reverse bias between the N-type layer 14 and its P-type region 18. An electrode 19 extends over the surface of stripe 18, an insulating layer 15 of SiO 2 being optionally included between the exposed areas of N-type layer 14 and the electrode. A further electrode 21 is carried by the substrate 10. Preferably the layers 11 and 13 comprise Ga 0 . 7 Al 0 . 3 As, and the respective thickness of the layers 11, 12, 13 and 14 is 3??, 0??5??, 1?? and 2??. The narrow stripe region 18 has a preferred depth of 2??2?? and a width of 5??.
公开日期	1975-03-12
申请日期	1972-07-25
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84141]
专题	半导体激光器专利数据库
作者单位	NIPPON ELECTRIC CO LTD
推荐引用方式 GB/T 7714	-. Semiconductor laser device. GB1386885A. 1975-03-12.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。