Semiconductor laser device | |
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1975-03-12 | |
著作权人 | NIPPON ELECTRIC CO LTD |
专利号 | GB1386885A |
国家 | 英国 |
文献子类 | 授权发明 |
其他题名 | Semiconductor laser device |
英文摘要 | 1386885 Electroluminescence NIPPON ELECTRIC CO Ltd 25 July 1972 [30 July 1971] 34811/72 Heading C4S [Also in Division H1] In a double heterostructure semiconductor laser in which a P-type GaAs active region 12 is located between N- and P-type layers 11 and 13, respectively, an N-type GaAs layer 14 is superimposed on the P-type layer 13, and a narrow stripe P-type region 18 formed by Zener diffusion extends through layer 14 into layer 13, the laser excitation current between the region 18 and an N-type GaAs substrate 10 being confined to the active region area immediately adjacent the stripe region 18 by reason of the reverse bias between the N-type layer 14 and its P-type region 18. An electrode 19 extends over the surface of stripe 18, an insulating layer 15 of SiO 2 being optionally included between the exposed areas of N-type layer 14 and the electrode. A further electrode 21 is carried by the substrate 10. Preferably the layers 11 and 13 comprise Ga 0 . 7 Al 0 . 3 As, and the respective thickness of the layers 11, 12, 13 and 14 is 3??, 0??5??, 1?? and 2??. The narrow stripe region 18 has a preferred depth of 2??2?? and a width of 5??. |
公开日期 | 1975-03-12 |
申请日期 | 1972-07-25 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/84141] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | NIPPON ELECTRIC CO LTD |
推荐引用方式 GB/T 7714 | -. Semiconductor laser device. GB1386885A. 1975-03-12. |
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