| Ridge waveguide semiconductor laser diode | |
| OHKUBO, MICHIO; IKEGAMI, YOSHIKAZU; NAMEGAYA, TAKESHI; KASUKAWA, AKIHIKO | |
| 2002-02-28 | |
| 著作权人 | FURUKAWA ELECTRIC CO., LTD., THE |
| 专利号 | US20020024984A1 |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Ridge waveguide semiconductor laser diode |
| 英文摘要 | A GaAs based semiconductor laser has a combination of cladding layers including a ridge structure part, and a remaining part which overlays the active layers of the laser, and an etch stop layer sandwiched between the ridge structure part and the remaining part. The remaining part preferably overlies the entire surface of laser active layers and has a thickness "D" which satisfies 1xW>D>=0.5xW wherein W is the width of a spot size having a strength of {fraction (1/e2)} as measured at the laser front facet in a direction perpendicular to the active layers, wherein "e" is the base of the natural logarithm. The semiconductor laser solves the kink phenomenon to obtain an excellent linear relationship between the optical output power and the injected current. |
| 公开日期 | 2002-02-28 |
| 申请日期 | 2001-06-01 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84118]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO., LTD., THE |
| 推荐引用方式 GB/T 7714 | OHKUBO, MICHIO,IKEGAMI, YOSHIKAZU,NAMEGAYA, TAKESHI,et al. Ridge waveguide semiconductor laser diode. US20020024984A1. 2002-02-28. |
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