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	Semiconductor laser
	MORIMOTO MASAHIRO; OSAKA SHIGEO
	1987-06-20
著作权人	FUJITSU LTD
专利号	JP1987137881A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To improve the insulating film covering property by filling mesa grooves flatly by a method wherein both sides of current flowing region including light emitting region are encircles with resin base insulating film. CONSTITUTION:An N-InP layer as a buffer layer and a P-InP layer 2 as a block layer are successively grown on a semiconductor substrate Then a V groove is formed on the P-InP layer 2 from the surface thereof to the point reaching the N-InP substrate Next, an N-InP layer 3 as a closing layer, on InGaAsP layer 4 as an active layer, a P-InP layer 5 as another closing layer and a P-InGaAsP layer 6 as a control layer are successively grown. To reduce the laser capacity, mesa grooves 7 reaching the N-InP substrate 1 are formed on both sides of the V groove. After coating the overall surface with e.g. a polyimide base resin film 9 as a resin base insulating film to be baked in nitrogen atmosphere for hardening process. Through this process, the mesa grooves 7 are completely filled with the resin 9 to flatten the substrate 1 while the resin 9 becomes a thermally stable insulating film so that the insulating film may be prevented from breaking down at the shoulders of mesa grooves 7 as well as electrode patterns from being damaged by e.g. disconnection etc.
公开日期	1987-06-20
申请日期	1985-12-12
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84096]
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	MORIMOTO MASAHIRO,OSAKA SHIGEO. Semiconductor laser. JP1987137881A. 1987-06-20.

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