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	半導体発光装置の製造方法
	牛嶋 一郎; 中井 三郎; 生沼 一幸; 大宮 史也
	1996-07-08
著作权人	富士通株式会社
专利号	JP2538960B2
国家	日本
文献子类	授权发明
其他题名	半導体発光装置の製造方法
英文摘要	PURPOSE:To improve an active layer in growth controllability and a product in yield by a method wherein a clad layer and an active layer adjacent to it are made to grow gradually on a substrate and in a groove apart from each other respectively. CONSTITUTION:A current constriction layer 22 composed of p-InP is made to grow on a substrate 2 A V-shaped groove 23 parallel with the orientation (011) is formed. An A laser 24 is formed of n-InP, a B layer 25 of non-doped InGaAsP, a C layer 26 of p-InP, and a contact layer 27 of p-InGaAsP are successively grown and laminated in this sequence. An n-side ohm electrode 28 is formed on the substrate 21 and a p-side ohm electrode 29 is formed on the contact layer 27. The growth speed of crystal in the flat part is slower than usual, therefore the supersaturation level of a solution is set to be largish and the A layer 24 and the B layer 25 are made to grow, a lower clad layer 30 and an active layer 31 can be formed in the V-shaped groove 23 independently of the A layer 24 and the B layer 25, and an upper clad layer 32 is formed on the active layer 31, where these layers can be uniformly and controllably formed into required shapes.
公开日期	1996-10-02
申请日期	1987-12-18
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84034]
专题	半导体激光器专利数据库
作者单位	富士通株式会社
推荐引用方式 GB/T 7714	牛嶋 一郎,中井 三郎,生沼 一幸,等. 半導体発光装置の製造方法. JP2538960B2. 1996-07-08.

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