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	Semiconductor laser device and manufacture thereof
	SUGINO TAKASHI; YOSHIKAWA AKIO
	1985-11-22
著作权人	MATSUSHITA DENKI SANGYO KK
专利号	JP1985235487A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device and manufacture thereof
英文摘要	PURPOSE:To improve the characteristics of oscillation and the yield of production by forming double junction structure containing an active layer on a semiconductor substrate to which an insulator film with a striped window is shaped. CONSTITUTION:A striped window having 3mum width in an SiO2 film 11 is formed onto an n type GaAs substrate 10. A flat layer 12 in 1mum, a non-doped active layer 13 in 0.1mum, a clad layer 14 in 1mum and a p type GaAs layer 15 in 0.2mum are grown continuously on the substrate 10. Multilayers are grown, and a metal 16 for a p type electrode is shaped on the surface, thus obtaining an ohmic electrode. An n type electrode metal 17 is evaporated on the n type GaAs substrate 10 side, and an ohmic electrode is shaped through alloying treatment. An oscillation threshold is lowered by 20-30%, the dispersion of characteristics in the same wafer is reduced, and the reproducibility of manufacture and the yield of production are also improved.
公开日期	1985-11-22
申请日期	1984-05-08
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84005]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA DENKI SANGYO KK
推荐引用方式 GB/T 7714	SUGINO TAKASHI,YOSHIKAWA AKIO. Semiconductor laser device and manufacture thereof. JP1985235487A. 1985-11-22.

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