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	Semiconductor laser element
	KONDO MASAFUMI; HAYAKAWA TOSHIRO; SUYAMA NAOHIRO; TAKAHASHI HISATOSHI
	1989-04-26
著作权人	SHARP CORP
专利号	JP1989109786A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser element
英文摘要	PURPOSE:To obtain a semiconductor laser element with one successive MBE growth by providing a forward mesa section having a plane (n11) A (n>=1) formed on a substrate as an oblique surface, and using a group IV amphoteric element as a dopant for a growing layer to be stacked on an activated layer. CONSTITUTION:A layer 19 doped with a group IV amphoteric element comprises a forward mesa based on a forward mesa 17a with a plane (n11) A (n>=1) formed on a substrate 17 as an oblique surface. On the oblique surface 19a of the forward mesa, where adhesion coefficients of group V elements are small, and therefore, a IV group amphoteric element which normally behaves as a doper for a plane (100) infiltrates into a location of the group V element, whereby a first conduction type region 19b is formed. As a result, the first conduction type region 19b of a second conduction type layer 19 acts as a current constricting region. Further, a laser oscillating region 18a in an activated layer 18 is interposed also widthwise by the layer 19 into which the group V amphoteric element is doped, an index waveguide being formed. According to the constitution, a semiconductor laser element having current constriction and index waveguide mechanisms can easily be obtained by a MBE method.
公开日期	1989-04-26
申请日期	1987-10-22
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83990]
专题	半导体激光器专利数据库
作者单位	SHARP CORP
推荐引用方式 GB/T 7714	KONDO MASAFUMI,HAYAKAWA TOSHIRO,SUYAMA NAOHIRO,et al. Semiconductor laser element. JP1989109786A. 1989-04-26.

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