QQ客服 官方微博 反馈留言

	Semiconductor integrated light source
	KIYOKU KATSUAKI; NOGUCHI ETSUO; OKAMOTO MINORU; MIKAMI OSAMU
	1992-08-12
著作权人	NIPPON TELEGR & TELEPH CORP
专利号	JP1992221873A
国家	日本
文献子类	发明申请
其他题名	Semiconductor integrated light source
英文摘要	PURPOSE:To improve the yield of manufacturing an array element having a plurality of semiconductor lasers including uniform wavelength intervals by inclining the linear regions of stripelike waveguides of lasers with respect to the forming direction of a diffraction grating, and forming them nonparallel to each other. CONSTITUTION:A diffraction grating pattern is written on a p-type InGaAsP optical guide layer 4, and formed in an uneven state by etching to form the periods of diffraction gratings on the entire surface of a substrate in the same direction such as in a direction . Then, a p-type InP clad layer 5 and a p-type InGaAsP electrode layer 6 are continuously grown. Thereafter, a thin SiO2 film is formed on the entire surface, and thin films are formed in a plurality of stripes along a direction by photoetching. Here, angles formed between the stripes (a)-(d) corresponding to lasers La, Lb, Lc, Ld and a plane are respectively set to about 3.57, 2.91, 2.06, 0.0 deg. With the thin films as masks it is etched until it reaches the substrate 1 to form a laminate of an inverted mesa shape.
公开日期	1992-08-12
申请日期	1990-12-21
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83867]
专题	半导体激光器专利数据库
作者单位	NIPPON TELEGR & TELEPH CORP
推荐引用方式 GB/T 7714	KIYOKU KATSUAKI,NOGUCHI ETSUO,OKAMOTO MINORU,et al. Semiconductor integrated light source. JP1992221873A. 1992-08-12.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。