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	Semiconductor laser element
	YAMAMOTO SABURO; MORIMOTO TAIJI; MIYAUCHI NOBUYUKI; MAEI SHIGEKI
	1987-01-27
著作权人	SHARP CORP
专利号	JP1987018784A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser element
英文摘要	PURPOSE:To effect the multi-longitudinal-mode oscillation while stabilizing the lateral mode by changing the width of an active layer in a resonance direction continuously in the refractive waveguide type semiconductor laser element which oscillates in multi-longitudinal-mode. CONSTITUTION:On a P-type GaAs substrate 4 comprising (100) face, two side grooves 2 and 3 which are bending in the center and gradually coming closer to each other toward the end parts are formed by etching. An N-type layer which is to be a current-blocking layer 5 is epitaxially grown on the whole surface including said grooves. A V-channel groove 1 is formed in the blocking layer 5 between the grooves 2 and 3 by etching and this groove 1 is used as a stripe current path. On the whole surface including them, a P-type GaAlAs clad layer 6, a GaAlAs active layer 7, an N-type GaAlAs clad layer 8, and an N-type GaAs cap layer 9 are laminated and epitaxially grown to compose a laser operation part. In this case, the distance between the grooves 2 and 3 are wide in the center, but it is also possible to make it narrow in the center and wide in both ends.
公开日期	1987-01-27
申请日期	1985-07-17
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83814]
专题	半导体激光器专利数据库
作者单位	SHARP CORP
推荐引用方式 GB/T 7714	YAMAMOTO SABURO,MORIMOTO TAIJI,MIYAUCHI NOBUYUKI,et al. Semiconductor laser element. JP1987018784A. 1987-01-27.

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