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	Semiconductor laser
	UKITA, MASAKAZU; ISHIBASHI, AKIRA
	2001-05-15
著作权人	SONY CORPORATION
专利号	USR37177
国家	美国
文献子类	授权发明
其他题名	Semiconductor laser
英文摘要	A semiconductor laser comprises: a first cladding layer of a first conduction type; an active layer stacked on the first cladding layer; and a second cladding layer of a second conduction type stacked on the active layer. The first cladding layer, the active layer and the second cladding layer are made of II-VI compound semiconductors. Pulse oscillation occurs with characteristics of a threshold current Ith(A), a threshold voltage Vth(V) of the diode composed of the first cladding layer, the active layer and the second cladding layer, a differential resistance RS(Q) of the diode after the rising, a thermal resistance Rt(K/W) and a characteristic temperature T0(K). When two amounts alpha and beta are defined by:the point (alpha,beta) exists in an area on the alpha-beta plane surrounded by the straight line alpha=0, the straight line beta=0, and the curve ((2ln t-1)/t, (1-ln t)/t2) having t as a parameter. The semiconductor laser may include a first optical waveguide layer between the first cladding layer and the active layer and include a second optical waveguide layer between the second cladding layer and the active layer, the first optical waveguide layer and the second optical waveguide layer being made of II-VI compound semiconductors. II-VI compound semiconductors making the first cladding layer and the second cladding layer may be a ZnMgSSe compound semiconductor. A semiconductor laser using II-VI compound semiconductors and having the capability of continuous oscillation at high temperatures including the room temperature is provided.
公开日期	2001-05-15
申请日期	1999-03-01
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83759]
专题	半导体激光器专利数据库
作者单位	SONY CORPORATION
推荐引用方式 GB/T 7714	UKITA, MASAKAZU,ISHIBASHI, AKIRA. Semiconductor laser. USR37177. 2001-05-15.

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