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	Semiconductor laser device
	IKEDA SOTOMITSU
	1990-10-26
著作权人	CANON INC
专利号	JP1990263491A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To manufacture a semiconductor laser for dynamic-single-longitudinal mode oscillations having optical wave guides of low loss which are suitable for integration by providing two channels of optical waveguide layers which are combined optically by diffraction gratings and performing current injection from a transverse direction to an active layer. CONSTITUTION:At least the 1st and 2nd optical waveguides 2 and 5 which are used for emitting light and for combining optically with an active layer 4 respectively are provided and both of them are combined optically by diffraction gratings 21 and 22 in which their degree are high, i.e., more than second order. In a dynamic-single-longitudinal mode oscillation laser that is manufactured in this way, carriers are injected horizontally from a transverse direction to the active layer 4 and then the carriers combine each other again in an active waveguide to emit light. Distributed feedback of light emitted is performed by the diffraction gratings of the 2nd optical waveguides 5 and its light combines optically with the 1st optical waveguide 2. Then it is induced and emitted in an active region by being reflected in the form of distribution. The waveguides of oscillating light become uniform and even when amplitude modulation takes place, they may oscillate at a stable, dynamic-single-mode.
公开日期	1990-10-26
申请日期	1989-04-04
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83718]
专题	半导体激光器专利数据库
作者单位	CANON INC
推荐引用方式 GB/T 7714	IKEDA SOTOMITSU. Semiconductor laser device. JP1990263491A. 1990-10-26.

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