| Semiconductor laser diode | |
| KITATANI, TAKESHI; SHINODA, KAZUNORI; ADACHI, KOICHIRO; AOKI, MASAHIRO | |
| 2009-12-22 | |
| 著作权人 | LUMENTUM JAPAN, INC. |
| 专利号 | US7636378 |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser diode |
| 英文摘要 | In an edge emitting laser having a window region with a ridge-waveguide structure, particularly, in a short cavity type of a laser operated with a low current, there has been a problem of its operating current being increased due to current leakage of the window portion. To solve this problem, in the window region, between an n-type substrate and a p-type cladding layer, a semi-insulating semiconductor layer into which Ru is doped is inserted. Alternatively, a stacked structure of a Ru-doped layer and a Fe-doped layer is introduced. |
| 公开日期 | 2009-12-22 |
| 申请日期 | 2008-02-08 |
| 状态 | 授权 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83696]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | LUMENTUM JAPAN, INC. |
| 推荐引用方式 GB/T 7714 | KITATANI, TAKESHI,SHINODA, KAZUNORI,ADACHI, KOICHIRO,et al. Semiconductor laser diode. US7636378. 2009-12-22. |
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