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	Semiconductor laser device
	TSUNEKANE MASAKI
	1989-11-08
著作权人	NEC CORP
专利号	JP1989278084A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To make a high-output operation possible and to enhance the reliability by a method wherein a second semiconductor layer whose refractive index is lower than that of a first semiconductor layer is formed on the first semiconductor layer in such a way that an active layer is sandwiched. CONSTITUTION:A second semiconductor layer 4 whose refractive index is lower than that of a first semiconductor layer 2 is formed on the first semiconductor layer 2, which has been formed on a semiconductor substrate 1 and contains a protruding light-waveguide shape formed to be flat by means of epitaxial growth by filling two or more sufficiently adjacent parallel grooves so as to couple light or by filling a groove having a region used to couple light in one part of the groove, in such a way that an active layer 3 is sandwiched. A peak of a distribution in the laminated direction of the light generated in the active layer 3 is situated inside the first semiconductor layer 2 whose refractive index is high. By this setup, it is possible to reduce a ratio of the light intensity at an end face of the active layer 3 to the total light radiated from an end face of a laser to about 10%; a high-output operation becomes possible; at the same time, the reliability at the high-output operation is enhanced.
公开日期	1989-11-08
申请日期	1988-04-28
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83688]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	TSUNEKANE MASAKI. Semiconductor laser device. JP1989278084A. 1989-11-08.

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