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	Semiconductor laser device
	IKEDO, NORIO; KAWAGUCHI, MASAO; YURI, MASAAKI
	2011-08-16
著作权人	PANASONIC CORPORATION
专利号	US8000365
国家	美国
文献子类	授权发明
其他题名	Semiconductor laser device
英文摘要	A semiconductor laser device includes a multilayer structure made of group III nitride semiconductors formed on a substrate. The multilayer structure includes a MQW active layer, and also includes a step region selectively formed in an upper portion thereof. In another upper portion of the multilayer structure, a ridge stripe portion including a waveguide, which extends in parallel to a principal surface of the multilayer structure, is formed. In the vicinity of the step region, a first region, in which the MQW active layer has a bandgap energy of Eg1, is formed, and a second region, which is adjacent to the first region and in which the MQW active layer has a bandgap energy of Eg2 (Eg2
公开日期	2011-08-16
申请日期	2009-07-13
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83641]
专题	半导体激光器专利数据库
作者单位	PANASONIC CORPORATION
推荐引用方式 GB/T 7714	IKEDO, NORIO,KAWAGUCHI, MASAO,YURI, MASAAKI. Semiconductor laser device. US8000365. 2011-08-16.

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