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	Semiconductor laser
	MIHASHI YUTAKA; NAGAI YUTAKA
	1989-03-06
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1989057782A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To locally eliminate a protrusion on a surface and to enhance heat sink effect by forming two parallel stripelike grooves in the depth not arriving at an active layer on a second clad layer, and providing a first conductivity type current blocking layer and a second conductivity type diffused region. CONSTITUTION:In a semiconductor laser containing a double heterostructure made of a first conductivity type first clad layer 2, a first or second conductivity type active layer 3, a second conductivity type second clad layer 4 sequentially formed on a first conductivity type semiconductor substrate 1, the layer 4 is etched to form two stripelike grooves 6a, 6b. When a voltage which becomes positive is applied to a P-type side electrode 9 and a voltage which becomes negative is applied to an N-type electrode 10, a current concentrically flows in a ridgelike photoconductive wave region 11 since the upper part of a P-type ridgelike photoconductive region 11 is connected to a deep P-type diffused region 12 to become a current passage.
公开日期	1989-03-06
申请日期	1987-08-28
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83636]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	MIHASHI YUTAKA,NAGAI YUTAKA. Semiconductor laser. JP1989057782A. 1989-03-06.

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