Buried type semiconductor laser | |
ISHIKAWA MAKOTO | |
1987-07-10 | |
著作权人 | NEC CORP |
专利号 | JP1987155582A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Buried type semiconductor laser |
英文摘要 | PURPOSE:To make it possible to form, with excellent yield, a semiconductor laser which is free from optical damage, of large output, of low threshold value and of high efficiency, by making an active layer absorbing oscillation light not present in the vicinity of a reflection end surface, and introducing a layer of low Al composition at the time of buried growth in a window region. CONSTITUTION:An n-type clad layer 2, n-type light waveguide layer 3, active layer 4, p-type intermediate layers 5 and 6, p-type clad layer 7 and p-type electrode layer 8 are formed in order on an n-type sbstrate 1 by epitaxial growth. Mesa etching is performed in the form of an inverse mesa leaving a light emitting part only, and the width of a window region is made narrower than the light emitting part. An intermediate layer 5 and the active layer in the window region, and the active layer in a construction part 14 are eliminated by etching, and an n-type buried layer 9 and a p-type buried layer 10 are formed. Thus, an n-p inverse bias junction is formed in the vicinity of a p-n forward direction bias junction in the light emitting part, and current constriction is enabled. In the window region, the light waveguide layer 3 is surrounded by the layers of low refraction index, 9 and 10, and the n-type clad layer 2, and so acts as an excellent light waveguide mechanism. At the time of forming the layer 10, the p-type layer 6 of low Al composition is exposed, and then it is easy to bury the layer 10 by making the super-saturation degree of a solution high, because an oxidation scarcely ever occurs. |
公开日期 | 1987-07-10 |
申请日期 | 1985-12-27 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/83628] |
专题 | 半导体激光器专利数据库 |
作者单位 | NEC CORP |
推荐引用方式 GB/T 7714 | ISHIKAWA MAKOTO. Buried type semiconductor laser. JP1987155582A. 1987-07-10. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论