Semiconductor laser element | |
HAYAKAWA TOSHIROU; TAKAGI TOSHIKIMI; OOTSUKA NAOTAKA | |
1982-10-01 | |
著作权人 | SHARP KK |
专利号 | JP1982159082A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser element |
英文摘要 | PURPOSE:To improve the life characteristic of the subject semiconductor laser element by a method wherein a P type clad layer or a photo guiding layer, an active layer, a buffer layer whereon no Se is doped, and an Se-doped N type clad layer are successively grown on a substrate. CONSTITUTION:A V-shape groove 27 is formed on the current control layer 22 which was grown on a P type GaAs substrate 21, and a Zn doped P type clad layer 23, a Ge-doped P type active layer 24, an Si-doped N type buffer layer 30, an Se-doped N type lad layer 25, and an Se-doped N type cap layer 26 are successively grown by lamination on the groove 27. As a result, the deterioration caused by the defect generating on the active layer and the Se-doped N type clad layer interface is suppressed, and the life of the subject laser element can be extended. |
公开日期 | 1982-10-01 |
申请日期 | 1981-03-25 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/83563] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | SHARP KK |
推荐引用方式 GB/T 7714 | HAYAKAWA TOSHIROU,TAKAGI TOSHIKIMI,OOTSUKA NAOTAKA. Semiconductor laser element. JP1982159082A. 1982-10-01. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论