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	Semiconductor laser element
	HAYAKAWA TOSHIROU; TAKAGI TOSHIKIMI; OOTSUKA NAOTAKA
	1982-10-01
著作权人	SHARP KK
专利号	JP1982159082A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser element
英文摘要	PURPOSE:To improve the life characteristic of the subject semiconductor laser element by a method wherein a P type clad layer or a photo guiding layer, an active layer, a buffer layer whereon no Se is doped, and an Se-doped N type clad layer are successively grown on a substrate. CONSTITUTION:A V-shape groove 27 is formed on the current control layer 22 which was grown on a P type GaAs substrate 21, and a Zn doped P type clad layer 23, a Ge-doped P type active layer 24, an Si-doped N type buffer layer 30, an Se-doped N type lad layer 25, and an Se-doped N type cap layer 26 are successively grown by lamination on the groove 27. As a result, the deterioration caused by the defect generating on the active layer and the Se-doped N type clad layer interface is suppressed, and the life of the subject laser element can be extended.
公开日期	1982-10-01
申请日期	1981-03-25
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83563]
专题	半导体激光器专利数据库
作者单位	SHARP KK
推荐引用方式 GB/T 7714	HAYAKAWA TOSHIROU,TAKAGI TOSHIKIMI,OOTSUKA NAOTAKA. Semiconductor laser element. JP1982159082A. 1982-10-01.

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