QQ客服 官方微博 反馈留言

	Distributed feedback type semiconductor laser
	KOBAYASHI ISAO
	1984-09-18
著作权人	NIPPON DENKI KK
专利号	JP1984165481A
国家	日本
文献子类	发明申请
其他题名	Distributed feedback type semiconductor laser
英文摘要	PURPOSE:To obtain a distributed feedback type semiconductor laser which has small internal reflection light, stable operation characteristics and high reproducibility of crystal growth by gradually reducing the shape of a mesa stripe at the longitudinal end in a converged shape. CONSTITUTION:After a diffraction grating 2 is formed by a 2-luminous flux interfering method and a chemically etching method on an InP substrate 1 of N type 001 orientation, a photowaveguide layer 3 of N type InGaAsP, an InGaAsP, active layer 4 and a P type InP clad layer 5 are formed by a liquid phase growth method. Subsequently, it is formed in a flat disc shape by a photolithographic method and a chemically etching method. In other words, an active unit 10 made of the grating 2, the layer 3, the layer 4 and the layer 5 is composed of a parallel region 11 having substantially constant width and a transition region 12 in which the width of the longitudinal end is gradually reduced in a converted shape, and formed of two slots 13, 14. Thereafter, a P type InP current block layer 6 and an N type InP current block layer 7 are formed on the surface except the upper part of the layer 5 of the unit 10 again by the liquid phase growth.
公开日期	1984-09-18
申请日期	1983-03-10
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83517]
专题	半导体激光器专利数据库
作者单位	NIPPON DENKI KK
推荐引用方式 GB/T 7714	KOBAYASHI ISAO. Distributed feedback type semiconductor laser. JP1984165481A. 1984-09-18.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。