Distributed feedback type semiconductor laser | |
KOBAYASHI ISAO | |
1984-09-18 | |
著作权人 | NIPPON DENKI KK |
专利号 | JP1984165481A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Distributed feedback type semiconductor laser |
英文摘要 | PURPOSE:To obtain a distributed feedback type semiconductor laser which has small internal reflection light, stable operation characteristics and high reproducibility of crystal growth by gradually reducing the shape of a mesa stripe at the longitudinal end in a converged shape. CONSTITUTION:After a diffraction grating 2 is formed by a 2-luminous flux interfering method and a chemically etching method on an InP substrate 1 of N type 001 orientation, a photowaveguide layer 3 of N type InGaAsP, an InGaAsP, active layer 4 and a P type InP clad layer 5 are formed by a liquid phase growth method. Subsequently, it is formed in a flat disc shape by a photolithographic method and a chemically etching method. In other words, an active unit 10 made of the grating 2, the layer 3, the layer 4 and the layer 5 is composed of a parallel region 11 having substantially constant width and a transition region 12 in which the width of the longitudinal end is gradually reduced in a converted shape, and formed of two slots 13, 14. Thereafter, a P type InP current block layer 6 and an N type InP current block layer 7 are formed on the surface except the upper part of the layer 5 of the unit 10 again by the liquid phase growth. |
公开日期 | 1984-09-18 |
申请日期 | 1983-03-10 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/83517] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | NIPPON DENKI KK |
推荐引用方式 GB/T 7714 | KOBAYASHI ISAO. Distributed feedback type semiconductor laser. JP1984165481A. 1984-09-18. |
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