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	Manufacture of semiconductor device
	MOCHIZUKI KAZUHIRO; KUSANO CHUSHIRO; MASUDA HIROSHI; MITANI KATSUHIKO; TAKAHASHI SUSUMU
	1991-04-23
著作权人	HITACHI LTD
专利号	JP1991097230A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor device
英文摘要	PURPOSE:To achieve selective high resistivity of semiconductor material, which has been considered to be difficult, by implanting or diffusing ions of transition metal represented by Fe. CONSTITUTION:In the manufacturing of an InAlAs/InGaAs hetero junction bipolar transistor, the following In0.58Ga0.47As layers are epitaxially grown on a semiinsulative InP substrate 1; a highly doped N-type layer 2, an N-type doped layer 3, a highly doped P-type layer 4, an N-type doped layer 5, and a highly doped N-type layer 6. In a dielectric isolation region 7 of an element, Fe is ion-implanted so as to have a concentration distribution, thereby easily obtaining resistivity of the region 7, higher than or equal to 10OMEGAcm. The surfaces of the highly doped P-type layer 4 and the highly doped N-type layer 2 are exposed by photolithography and etching. After an SiO2 side wall film 11 is formed on a collector electrode forming region, a highly doped N-type layer 12 is buried by selective epitaxial growth, and a collector electrode 13, a base electrode 14, and an emitter electrode 15 are formed.
公开日期	1991-04-23
申请日期	1989-09-11
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83500]
专题	半导体激光器专利数据库
作者单位	HITACHI LTD
推荐引用方式 GB/T 7714	MOCHIZUKI KAZUHIRO,KUSANO CHUSHIRO,MASUDA HIROSHI,et al. Manufacture of semiconductor device. JP1991097230A. 1991-04-23.

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