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	Semiconductor device
	ISOZUMI SHIYOUJI
	1985-04-19
著作权人	FUJITSU KK
专利号	JP1985068686A
国家	日本
文献子类	发明申请
其他题名	Semiconductor device
英文摘要	PURPOSE:To improve the deterioration of a semiconductor element and to improve the reliability by forming so that the difference of grating constant between the second semiconductor layer and the first semiconductor layer is smaller than that between the second semiconductor layer and a semiconductor substrate and that the energy gap of the first semiconductor layer is that or lower of the third semiconductor layer. CONSTITUTION:Since a Ga0.5Al0.5As crystal, a buffer layer 13 for forming a stripe groove 15 and the layer 13, In0.01Ga0.99As crystal of the layer 12 in a stripe groove 15 are equal in the grating constant, no stress concentration is generated, and since the thicknesses of the buffer layers 12, 13 are large and the thickness of a Ga0.84Al0.16As active layer 17 is small, the layer 17 and the stress near the layer are alleviated. Further, the energy gap of the In0.01Ga0.99As buffers 12, 13 are smaller than the layer 17 and sufficiently large light absorption out of the necessary stripe region is obtained to perform a lateral mode guide. Moreover, the N type layer 13 is contained in the In0.01Ga0.99As buffer layer, a P-N reverse junction is formed between the P type Ga0.5Al0.5As first clad layer 16 out of the stripe region to narrow the current.
公开日期	1985-04-19
申请日期	1983-09-26
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83473]
专题	半导体激光器专利数据库
作者单位	FUJITSU KK
推荐引用方式 GB/T 7714	ISOZUMI SHIYOUJI. Semiconductor device. JP1985068686A. 1985-04-19.

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