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	Light emitting element
	BETSUPU TATSUROU; KOMATSUBARA TADASHI; HACHIMAN AKIHIRO; HIRAHARA KEIJIROU
	1984-12-03
著作权人	TOSHIBA KK
专利号	JP1984213179A
国家	日本
文献子类	发明申请
其他题名	Light emitting element
英文摘要	PURPOSE:To obtain the titled element whose luminous efficiency is sufficiently excellent as the light source for optical communication even by low current injection type by a method wherein a GaAlAs double hetero type junction is formed by successively laminating a P type GaAlAs clad layer, an N type Ga1-xAlxAs active layer, and an N type GaAlAs clad layer on a P type GaAs substrate. CONSTITUTION:The P type GaAlAs clad layer 2, N type Ga1-xAlxAs active layer 3, and N type GaAlAs clad layer 4 are formed by lamination on the P type GaAs substrate It is sufficient that the value (x) is approx. 0<=x<=0.3 in order that said active layer 3 becomes in direct transition. Besides, the active layer 3 (0<=x<=0.3) should have the growing temperature at 830-829.9 deg.C, cooling speed at 0.1 deg.C/min, and is doped with Si. In case of doping the active layer 3 with Si in such a manner, it is generally known that said layer grows in P type; however, this active layer turns to an N type layer according to the condition of growing temperature and Si doping amount. Further, the light emitting element thus turning the active layer 3 to N type improves about double in the luminous efficiency as compared with the case of said element turned P type.
公开日期	1984-12-03
申请日期	1983-05-19
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83422]
专题	半导体激光器专利数据库
作者单位	TOSHIBA KK
推荐引用方式 GB/T 7714	BETSUPU TATSUROU,KOMATSUBARA TADASHI,HACHIMAN AKIHIRO,et al. Light emitting element. JP1984213179A. 1984-12-03.

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