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	Buried-type semiconductor laser
	OKAI MAKOTO; UOMI KAZUHISA; TSUJI SHINJI; KAYANE NAOKI; HARADA KAZUHIDE
	1989-05-02
著作权人	HITACHI LTD
专利号	JP1989114092A
国家	日本
文献子类	发明申请
其他题名	Buried-type semiconductor laser
英文摘要	PURPOSE:To obtain a semiconductor laser which facilitates extra-high speed modulation not lower than 20 GHz and has a high life reliability by a method werein the width of a burying layer outside a stripe is made to be 0mum or less and a parasitic capacitance is significantly reduced. CONSTITUTION:After a light guide layer 2, an undoped active layer 3, a buffer layer 4 and a p-type InP cladding layer 5 are successively built up on the surface of a substrate 1 by liquid growth, a mesa stripe 13 in which the active layer 3 with a width about 1mum is left is formed. After that, burying layers 6 and 7 are built up on both the sides of the mesa stripe 13 by liquid growth to form current blocking layers and a p-type InP cladding layer 8 and a p-type cap layer 9 are built up over the whole surface by liquid growth. Then electrodes 10 and 11 are formed on the upper and lower surfaces by evaporation. Then approximately vertical trenches 14 are formed near both the sides of the active layer by a method such as reactive ion etching with halogen system gas to reduce a parasitic capacitance to the extent of 1-3 pF.
公开日期	1989-05-02
申请日期	1987-10-28
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83313]
专题	半导体激光器专利数据库
作者单位	HITACHI LTD
推荐引用方式 GB/T 7714	OKAI MAKOTO,UOMI KAZUHISA,TSUJI SHINJI,et al. Buried-type semiconductor laser. JP1989114092A. 1989-05-02.

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