QQ客服 官方微博 反馈留言

	Semiconductor device and manufacturing method thereof
	TAKADA, KAN; AOKI, OSAMU; YAMAMOTO, TSUYOSHI
	2006-09-21
著作权人	FUJITSU LIMITED
专利号	US20060209914A1
国家	美国
文献子类	发明申请
其他题名	Semiconductor device and manufacturing method thereof
英文摘要	In order to reduce the parasitic capacitance of the device and obtain an enhanced high-speed response characteristic while assuring the reliability of the device, a semiconductor device is provided such that it comprises: a mesa structure formed on a semiconductor substrate and including a first cladding layer, an active layer, a second cladding layer, a first protective layer and a second protective layer each covering respective side of the active layer, and a cap layer formed between the first protective layer and the second protective layer and covering the top surface of the active layer, wherein aluminum is included only in the active layer; and a buried layer for burying the mesa structure, wherein the first cladding layer, the first protective layer, the second protective layer, and the second cladding layer constitute the side of the mesa structure.
公开日期	2006-09-21
申请日期	2005-10-25
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83312]
专题	半导体激光器专利数据库
作者单位	FUJITSU LIMITED
推荐引用方式 GB/T 7714	TAKADA, KAN,AOKI, OSAMU,YAMAMOTO, TSUYOSHI. Semiconductor device and manufacturing method thereof. US20060209914A1. 2006-09-21.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。