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	Semiconductor laser apparatus and method of producing the same
	ISHINO MASATO; FUJIWARA KIYOSHI; MATSUI YASUSHI
	1992-05-12
著作权人	MATSUSHITA ELECTRIC IND CO LTD
专利号	JP1992137779A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser apparatus and method of producing the same
英文摘要	PURPOSE:To ensure high performance and high reliability by forming MQW layer having good flatness without receiving influence of diffraction grating of the base layer using a liquid phase epitaxial layer and then forming a hetero interface having less number of faults to a well layer and barrier interface by the melt-back phenomenon. CONSTITUTION:A diffraction grating 2 is formed on an N type InP substrate 1 and a InGaAsP photoconductive layer 3 consisting of epitaxial layer, an active layer of multiquantum well structure 4 consisting of the periodical structure of InGaAsP well layer 20 and InGaAsP barrier layer 21 and a P type second InP clad layer 5 are grown on this diffraction grating 2 by the liquid phase growth method. In this case, the MQW active layer 4 having excellent flatness can be obtained even when the epitaxial layer is grown on the substrate having uneven surface. Moreover, a composition transition layer is formed by the melt-back phenomenon which is peculiar to the liquid phase growth at the interface of the InGaAsP well layer 20 and InGaAsP barrier layer 21 and thereby good interface having no defective level not including the defects formed at the hetero-interface can be obtained.
公开日期	1992-05-12
申请日期	1990-09-28
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83295]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	ISHINO MASATO,FUJIWARA KIYOSHI,MATSUI YASUSHI. Semiconductor laser apparatus and method of producing the same. JP1992137779A. 1992-05-12.

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