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	Semiconductor laser
	NAKAMURA, NAOKI
	2015-04-14
著作权人	MITSUBISHI ELECTRIC CORPORATION
专利号	US9008140
国家	美国
文献子类	授权发明
其他题名	Semiconductor laser
英文摘要	A semiconductor laser includes: a p-type semiconductor substrate; a ridge having an active layer and cladding layers on the semiconductor substrate; a current blocking layer embedding side surfaces of the ridge; and an n-type contact layer on the ridge and the current blocking layer. The current blocking layer includes a first p-type layer, an n-type layer or a hole-trapping insulating semiconductor layer, a second p-type layer, a diffusion inhibiting layer, and a third p-type layer stacked, in order, from the semiconductor substrate. The n-type contact layer includes a p-type inverted region located in a portion of the n-type contact layer, in contact with the third p-type layer. Dopants in the third p-type layer diffuse into the p-type inverted region. The diffusion inhibiting layer is an undoped semiconductor material or a semi-insulating semiconductor material and inhibits dopants in the third p-type layer from being diffused into the active layer.
公开日期	2015-04-14
申请日期	2013-03-13
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83261]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORPORATION
推荐引用方式 GB/T 7714	NAKAMURA, NAOKI. Semiconductor laser. US9008140. 2015-04-14.

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