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	Compound semiconductor device
	WATANABE KOJI
	1989-08-04
著作权人	MATSUSHITA ELECTRIC IND CO LTD
专利号	JP1989194469A
国家	日本
文献子类	发明申请
其他题名	Compound semiconductor device
英文摘要	PURPOSE:To stabilize in a heat treatment by doping electrically inactive V or VII group element as an impurity at III-V compound semiconductor containing group II element as an impurity. CONSTITUTION:An N type InGaAs layer 2 is grown by an epitaxial technique, such as MBE on a semi-insulating InP substrate 1 in a InP-InGaAs hetero bipolar transistor, an N-type InGaAs layer 3 is then grown, As or F is, for example, doped thereon to sequentially form a Be-doped P-type InGaAs layer 24 having 5X10cm of carrier concentration thereon, further an N-type InP layer 5 having 2X10cm of carrier concentration and then an N type nGaAs layer 6 having 1X10cm of carrier concentration. After the Be ions are selectively implanted, it is heat treated to form a P type InGaAs region 10. An emitter electrode 7 and a collector electrode 8 are formed of AuGe, and a base electrode 9 is formed of AuZn. In the thus obtained bipolar transistor, the diffusion of group II element from the layer 4 is suppressed by the As of the V group element or the F of the VII group element, and the deterioration of electron implanting efficiency is suppressed. Accordingly, an emitter grounded current amplification factor is improved.
公开日期	1989-08-04
申请日期	1988-01-29
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83250]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	WATANABE KOJI. Compound semiconductor device. JP1989194469A. 1989-08-04.

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