Compound semiconductor device | |
WATANABE KOJI | |
1989-08-04 | |
著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
专利号 | JP1989194469A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Compound semiconductor device |
英文摘要 | PURPOSE:To stabilize in a heat treatment by doping electrically inactive V or VII group element as an impurity at III-V compound semiconductor containing group II element as an impurity. CONSTITUTION:An N type InGaAs layer 2 is grown by an epitaxial technique, such as MBE on a semi-insulating InP substrate 1 in a InP-InGaAs hetero bipolar transistor, an N-type InGaAs layer 3 is then grown, As or F is, for example, doped thereon to sequentially form a Be-doped P-type InGaAs layer 24 having 5X10cm of carrier concentration thereon, further an N-type InP layer 5 having 2X10cm of carrier concentration and then an N type nGaAs layer 6 having 1X10cm of carrier concentration. After the Be ions are selectively implanted, it is heat treated to form a P type InGaAs region 10. An emitter electrode 7 and a collector electrode 8 are formed of AuGe, and a base electrode 9 is formed of AuZn. In the thus obtained bipolar transistor, the diffusion of group II element from the layer 4 is suppressed by the As of the V group element or the F of the VII group element, and the deterioration of electron implanting efficiency is suppressed. Accordingly, an emitter grounded current amplification factor is improved. |
公开日期 | 1989-08-04 |
申请日期 | 1988-01-29 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/83250] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
推荐引用方式 GB/T 7714 | WATANABE KOJI. Compound semiconductor device. JP1989194469A. 1989-08-04. |
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