High pressure synthesis of antiferromagnetic semiconductor of ZnMnO3

doi:10.1016/j.physleta.2020.126943

	High pressure synthesis of antiferromagnetic semiconductor of ZnMnO3
	Ni, Meiyan 1; Zhang, Shoubao 1; Han, Shuo 1; Liu, Xiaoli 1; Zhu, Xuebin 2; Lu, Hongyan 1; Zhou, Shaoshuai 1; Zhao, Hongyan 1
刊名	PHYSICS LETTERS A
	2020-12-30
卷号	384
关键词	High pressure synthesis Manganese-base ilmenite Antiferromagnetic transition First principles calculation Semiconductor
ISSN号	0375-9601
DOI	10.1016/j.physleta.2020.126943
通讯作者	Zhang, Shoubao(zhang.shoubao@qfnu.edu.cn)
英文摘要	Ilmenite-type compound ZnMnO3 was synthesized by high temperature and high pressure method. The phase is different from that synthesized at atmospheric pressure, it shows a hexagonal structure with a space group of R-3H (No. 148). Its lattice parameters are a = b = 4.9608(2) angstrom, c = 13.7876(3) angstrom at room temperature. The octahedrons of ZnO6 and MnO6 are stacked layer by layer. The electronic configuration is Zn2+Mn4+O3, where the antiferromagnetic (AFM) interaction between Mn4+ ions induces an AFM transition at 16.2 K. The results of the first principles calculation also indicates ZnMnO3 is a Mn4+ ions dominated AFM insulator with an energy gap of 1.34 eV. (C) 2020 Elsevier B.V. All rights reserved.
资助项目	National Natural Science Foundation of China (NSFC)[11904197] ; National Natural Science Foundation of China (NSFC)[11804188] ; Natural Science Foundation of Shandong Province, China[ZR2019QF010] ; Natural Science Foundation of Shandong Province, China[ZR2018PA010] ; Project of Introduction and Cultivation for Young Innovative Talents in Colleges and Universities of Shandong Province
WOS关键词	PHASE ; EVOLUTION ; SYSTEM
WOS研究方向	Physics
语种	英语
出版者	ELSEVIER
WOS记录号	WOS:000588303900024
资助机构	National Natural Science Foundation of China (NSFC) ; Natural Science Foundation of Shandong Province, China ; Project of Introduction and Cultivation for Young Innovative Talents in Colleges and Universities of Shandong Province
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/105111]
专题	中国科学院合肥物质科学研究院
通讯作者	Zhang, Shoubao
作者单位	1.Qufu Normal Univ, Sch Phys & Phys Engn, Qufu 273165, Shandong, Peoples R China 2.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
推荐引用方式 GB/T 7714	Ni, Meiyan,Zhang, Shoubao,Han, Shuo,et al. High pressure synthesis of antiferromagnetic semiconductor of ZnMnO3[J]. PHYSICS LETTERS A,2020,384.
APA	Ni, Meiyan.,Zhang, Shoubao.,Han, Shuo.,Liu, Xiaoli.,Zhu, Xuebin.,...&Zhao, Hongyan.(2020).High pressure synthesis of antiferromagnetic semiconductor of ZnMnO3.PHYSICS LETTERS A,384.
MLA	Ni, Meiyan,et al."High pressure synthesis of antiferromagnetic semiconductor of ZnMnO3".PHYSICS LETTERS A 384(2020).