Interface passivation treatment by halogenated low-dimensional perovskites for high-performance and stable perovskite photovoltaics

doi:10.1016/j.nanoen.2020.104753

	Interface passivation treatment by halogenated low-dimensional perovskites for high-performance and stable perovskite photovoltaics
	Liu, Guozhen 1,2; Zheng, Haiying 3; Xu, Huifen 1,3; Zhang, Liying 1,2; Xu, Xiaoxiao 1,2; Xu, Shendong 1,2; Pan, Xu 1
刊名	NANO ENERGY
	2020-07-01
卷号	73
关键词	Perovskite solar cells Low-dimensional perovskite Passivation effect Halogenated cations Photovoltaic performance
ISSN号	2211-2855
DOI	10.1016/j.nanoen.2020.104753
通讯作者	Zheng, Haiying() ; Pan, Xu(xpan@rntek.cas.cn)
英文摘要	The voltage loss which is mainly caused by the nonradiative recombination at the interface has played a serious negative effect on the photovoltaic performance of perovskite solar cells (PSCs). Herein, we firstly designed four halogenated low-dimensional perovskite (LDP) capping layers by the way of employing different benzylammonium-based aromatic cations for high-performance devices. The introduction of halogen functional groups can not only enhance the hydrophobicity but also optimize the photovoltaic characteristics of LDP which play an important role on passivation effect of the interface between perovskite and hole transport materials (HTM) layer. The films with halogenated LDP passivation layers displayed suppressed nonradiative recombination and reduced trap density, leading to significantly reduced voltage loss. As a result, the optimal devices with 4-bromobenzylammonium-based LDP layer achieved the power conversion efficiency (PCE) as high as 21.13% with an enhanced open-circuit voltage (Voc) of 1.14 V. Under the hydrophobic and buffer action of the halogenated LDP layer, the modified devices showed outstanding long-term stability when exposed to moisture, heat and continuous UV irradiation. This work proves the enhanced passivation effect of LDP layer by regulating the chemical property of introduced organic cations for high-performance and stable perovskite photovoltaics.
资助项目	National Key Research and Development Program of China[2016YFA0202401] ; Colleges and Universities in Shandong Province Science and Technology Projects[J17KA097]
WOS关键词	HIGH-EFFICIENCY ; SOLAR-CELLS ; HYBRID PEROVSKITES ; HALIDE PEROVSKITES ; IODIDE ; ABSORBER ; DESIGN ; FILMS
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种	英语
出版者	ELSEVIER
WOS记录号	WOS:000560077400012
资助机构	National Key Research and Development Program of China ; Colleges and Universities in Shandong Province Science and Technology Projects
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/92837]
专题	中国科学院合肥物质科学研究院
通讯作者	Zheng, Haiying; Pan, Xu
作者单位	1.Chinese Acad Sci, Hefei Inst Phys Sci, Inst Appl Technol, Key Lab Photovolta & Energy Conservat Mat, Hefei 230031, Peoples R China 2.Univ Sci & Technol China, Hefei 230026, Peoples R China 3.Anhui Univ, Inst Phys Sci & Informat Technol, Hefei 230601, Peoples R China
推荐引用方式 GB/T 7714	Liu, Guozhen,Zheng, Haiying,Xu, Huifen,et al. Interface passivation treatment by halogenated low-dimensional perovskites for high-performance and stable perovskite photovoltaics[J]. NANO ENERGY,2020,73.
APA	Liu, Guozhen.,Zheng, Haiying.,Xu, Huifen.,Zhang, Liying.,Xu, Xiaoxiao.,...&Pan, Xu.(2020).Interface passivation treatment by halogenated low-dimensional perovskites for high-performance and stable perovskite photovoltaics.NANO ENERGY,73.
MLA	Liu, Guozhen,et al."Interface passivation treatment by halogenated low-dimensional perovskites for high-performance and stable perovskite photovoltaics".NANO ENERGY 73(2020).