Single-electron transport through single and coupling dopant atoms in silicon junctionless nanowire transistor

	Single-electron transport through single and coupling dopant atoms in silicon junctionless nanowire transistor
	Xiao-Di Zhang ; Wei-Hua Han ; Wen Liu ; Xiao-Song Zhao ; Yang-Yan Guo ; Chong Yang ; Jun-Dong Chen ; Fu-Hua Yang
刊名	Chin. Phys. B
	2019
卷号	28 期号:12 页码:127302
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/29764]
专题	半导体研究所_半导体集成技术工程研究中心
推荐引用方式 GB/T 7714	Xiao-Di Zhang ; Wei-Hua Han ; Wen Liu ; Xiao-Song Zhao ; Yang-Yan Guo ; Chong Yang ; Jun-Dong Chen ; Fu-Hua Yang. Single-electron transport through single and coupling dopant atoms in silicon junctionless nanowire transistor[J]. Chin. Phys. B,2019,28(12):127302.
APA	Xiao-Di Zhang ; Wei-Hua Han ; Wen Liu ; Xiao-Song Zhao ; Yang-Yan Guo ; Chong Yang ; Jun-Dong Chen ; Fu-Hua Yang.(2019).Single-electron transport through single and coupling dopant atoms in silicon junctionless nanowire transistor.Chin. Phys. B,28(12),127302.
MLA	Xiao-Di Zhang ; Wei-Hua Han ; Wen Liu ; Xiao-Song Zhao ; Yang-Yan Guo ; Chong Yang ; Jun-Dong Chen ; Fu-Hua Yang."Single-electron transport through single and coupling dopant atoms in silicon junctionless nanowire transistor".Chin. Phys. B 28.12(2019):127302.