| Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal | |
| Ding Yu ; Guiying Shen ; Hui Xie ; Jingming Liu ; Jing Sun ; Youwen Zhao | |
| 刊名 | Chinese Physics B
 |
| 2019 | |
| 卷号 | 28期号:5页码:057102 |
| 内容类型 | 期刊论文 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29567]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Ding Yu ; Guiying Shen ; Hui Xie ; Jingming Liu ; Jing Sun ; Youwen Zhao. Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal[J]. Chinese Physics B,2019,28(5):057102. |
| APA | Ding Yu ; Guiying Shen ; Hui Xie ; Jingming Liu ; Jing Sun ; Youwen Zhao.(2019).Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal.Chinese Physics B,28(5),057102. |
| MLA | Ding Yu ; Guiying Shen ; Hui Xie ; Jingming Liu ; Jing Sun ; Youwen Zhao."Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal".Chinese Physics B 28.5(2019):057102. |
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