Super-hard AlCrTiVZr high-entropy alloy (HEA) nitride films were synthesized by high power impulse magnetron sputtering (HiPIMS) without external heating. The effect of N₂ gas low rate (F_N), ranging from 0 sccm to 20 sccm, on the HiPIMS plasma discharge characterization, element concentration, deposition rate, microstructure, cross-sectional morphology, residual stress, and mechanical properties of films were explored. Results show that increasing F_N increases the HiPIMS discharge current, accompanying with the decreased deposition rate. The saturated nitride (AlCrTiVZr)N films were obtained at F_N = 8 sccm and higher, which exhibit a simple NaCl-type FCC structure. A continuous variation in the microstructure, from amorphous to columnar crystal structure, has been observed for these nitride films. It is discovered that the moderate F_N of 0 sccm to 12 sccm leads to an enhanced bombardment with high-energy particles due to the increased plasma density, while the bombardment effect is weakened because of the decreased plasma energy as the F_N is increased further. The nitride films deposited at F_N = 12 sccm have super-hardness of 41.8 GPa and low wear rate of 2.3 × 10⁻⁷ mm³/Nm. Meanwhile, a change of preferred orientation from (2 0 0) to (1 1 1) is presented as the F_N increases from 12 sccm to 20 sccm.