Low-temperature (T = 30 K) photoluminescence (PL) and post thermal annealing effects on 150 KeV proton irradiated GaInAsN bulk, single quantum well and triple quantum well structures (Eg (similar to)1.0 eV) have been investigated. The nitrogen proportion of the samples was confirmed by high-resolution X-ray diffraction (HR-XRD) measurement as 0.26%, 0.30% and 0.20% for GaInAsN bulk, SQW, and MQW samples, respectively. The result shows that the PL intensity of GaInAsN materials degraded seriously by proton irradiation. The PL intensity enhancement were observed for all three types of sample after thermal annealing at 650 degrees C for 5 min, and MQW sample was recovered by the factor bigger than 100. The irradiation induced red-shift and thermal annealing induced blue-shift phenomena were analyzed by SKIM simulation result and theoretical models of InGaAs band structure.