Epitaxial growth mechanism of perovskite (111) SrTiO3 on wurtzite (0002) GaN with single unit- cell TiN buffer layers

doi:10.1016/j.apsusc.2018.09.237

	Epitaxial growth mechanism of perovskite (111) SrTiO3 on wurtzite (0002) GaN with single unit- cell TiN buffer layers
	Li, Guanjie; Li, Xiaomin; Chen, Yongbo; Jia, Shasha; Xu, Xiaoke
刊名	APPLIED SURFACE SCIENCE
	2019-01-28
卷号	465 页码:1055
关键词	Epitaxial growth SrTiO3 GaN TiN buffer layer Pulsed laser deposition
ISSN号	0169-4332
DOI	10.1016/j.apsusc.2018.09.237
文献子类	Article
英文摘要	Epitaxial integration of SrTiO3 (STO) with GaN plays a key role in exploring monolithic and multifunctional GaN-based devices. Herein, high quality perovskite (1 1 1) STO thin films were epitaxially grown on wurtzite (0 0 0 2) GaN substrates with novel designed single unit-cell TiN buffer layers by pulsed laser deposition. Epitaxial relationship model is proposed to be (1 1 1) [1 (1) over bar 0] STO//(1 1 1)[1 (1) over bar 0] TiN//(0 0 0 2)[1 1 (2) over bar 0] GaN. Furthermore, interfacial structure and epitaxial relationship of STO/TiN/GaN heterostructure is directly confirmed on atomic scale by high-resolution transmission electron microscopy. With the insertion of TiN, lattice mismatch between (1 1 1) STO and (0 0 0 2) GaN is reduced tremendously from 13.3% to 7.9%. More significantly, relaxation process and N atom vacancies in surface atom layer of single unit-cell (1 1 1) TiN could further release lattice mismatch strain between STO and GaN, and thus enormously facilitates epitaxial growth of STO. Moreover, the formation mechanism of twin domain structures and tilted twin grain-boundaries in STO is also discussed to clarify the epitaxial growth process of perovskite (1 1 1) STO on wurtzite (0 0 0 2) GaN.
WOS关键词	CRYSTALLINE OXIDES ; THIN-FILMS ; INTEGRATION
WOS研究方向	Chemistry ; Materials Science ; Physics
语种	英语
出版者	ELSEVIER SCIENCE BV
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/27562]
专题	中国科学院上海硅酸盐研究所
推荐引用方式 GB/T 7714	Li, Guanjie,Li, Xiaomin,Chen, Yongbo,et al. Epitaxial growth mechanism of perovskite (111) SrTiO3 on wurtzite (0002) GaN with single unit- cell TiN buffer layers[J]. APPLIED SURFACE SCIENCE,2019,465:1055.
APA	Li, Guanjie,Li, Xiaomin,Chen, Yongbo,Jia, Shasha,&Xu, Xiaoke.(2019).Epitaxial growth mechanism of perovskite (111) SrTiO3 on wurtzite (0002) GaN with single unit- cell TiN buffer layers.APPLIED SURFACE SCIENCE,465,1055.
MLA	Li, Guanjie,et al."Epitaxial growth mechanism of perovskite (111) SrTiO3 on wurtzite (0002) GaN with single unit- cell TiN buffer layers".APPLIED SURFACE SCIENCE 465(2019):1055.