Strong interfacial coupling effects of ferroelectric polarization with two-dimensional electron gas in BaTiO3/MgO/AlGaN/GaN/Si heterostructures

doi:10.1039/c8tc05795h

	Strong interfacial coupling effects of ferroelectric polarization with two-dimensional electron gas in BaTiO3/MgO/AlGaN/GaN/Si heterostructures
	Li, Guanjie; Li, Xiaomin; Zhao, Junliang; Zhu, Qiuxiang; Chen, Yongbo
刊名	JOURNAL OF MATERIALS CHEMISTRY C
	2019-05-21
卷号	7 期号:19 页码:5677
ISSN号	2050-7526
DOI	10.1039/c8tc05795h
文献子类	Article
英文摘要	BaTiO3 (BTO)/MgO/GaN and BTO/MgO/AlGaN/GaN ferroelectric-semiconductor heterostructures with ultrathin MgO buffer layers were constructed by pulsed laser deposition, and an interfacial coupling mechanism between the ferroelectric polarization of BTO and two-dimensional electron gas (2DEG) at the AlGaN/GaN interface was explored for enhancement-mode high electron mobility transistors (HEMTs). The upward ferroelectric self-polarization characteristic of BTO integrated on GaN and AlGaN/GaN was induced by the suspect space-charge region at the BTO/GaN interface, which was directly confirmed by piezoresponse force microscopy. Thus, the 2DEG density at the AlGaN/GaN interface was spontaneously reduced by the ferroelectric field effect of BTO with upward polarization, and the threshold voltage was prominently increased to -0.4 V. More significantly, interfacial coupling correlation between the ferroelectric polarization state and 2DEG was established. Via modulating the ferroelectric polarization state of BTO, continuous regulation of the threshold voltage from -0.4 V to +3.2 V and a large counter-clockwise memory window of 2.2 V were demonstrated. A BTO/MgO/AlGaN/GaN heterostructure could be a promising candidate for GaN-based enhancement-mode HEMTs and non-volatile memory devices.
WOS研究方向	Materials Science ; Physics
语种	英语
出版者	ROYAL SOC CHEMISTRY
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/27109]
专题	中国科学院上海硅酸盐研究所
推荐引用方式 GB/T 7714	Li, Guanjie,Li, Xiaomin,Zhao, Junliang,et al. Strong interfacial coupling effects of ferroelectric polarization with two-dimensional electron gas in BaTiO3/MgO/AlGaN/GaN/Si heterostructures[J]. JOURNAL OF MATERIALS CHEMISTRY C,2019,7(19):5677.
APA	Li, Guanjie,Li, Xiaomin,Zhao, Junliang,Zhu, Qiuxiang,&Chen, Yongbo.(2019).Strong interfacial coupling effects of ferroelectric polarization with two-dimensional electron gas in BaTiO3/MgO/AlGaN/GaN/Si heterostructures.JOURNAL OF MATERIALS CHEMISTRY C,7(19),5677.
MLA	Li, Guanjie,et al."Strong interfacial coupling effects of ferroelectric polarization with two-dimensional electron gas in BaTiO3/MgO/AlGaN/GaN/Si heterostructures".JOURNAL OF MATERIALS CHEMISTRY C 7.19(2019):5677.