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	Linear avalanche photodetector based on CMOS process
	Ju Guohao; Cheng Zhengxi; Chen Yongping
	2019
关键词	无
DOI	10.1117/12.2521364
英文摘要	A linear avalanche photodetector based on standard CMOS process is designed and fabricated. The doping dose of p-layer of the device with typical n+-p-π-p+ epitaxial structure is 1.82×1012/cm2, and the depth of the doping peak concentration is 2.1 μm. The dark current, photocurrent, spectral response and excess noise factor are measured. The punch-through voltage is about 60 V, the breakdown voltage is about 147 V. The spectral response range is 400~1100 nm, and the peak response wavelength is about 850 nm, the peak response wavelength is in the near-infrared range. When the gain is 50, the reverse bias voltage is about 143.3 V, and excess noise factor is about 4.35. The results show that the device has an excellent performance of visible light detection.
内容类型	会议论文
源URL	[http://202.127.2.71:8080/handle/181331/12335]
专题	上海技术物理研究所_上海技物所
推荐引用方式 GB/T 7714	Ju Guohao,Cheng Zhengxi,Chen Yongping. Linear avalanche photodetector based on CMOS process[C]. 见:.

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