QQ客服 官方微博 反馈留言

	Design of low noise avalanche photodiode single element detectors and linear arrays through CMOS process
	Cheng Zhengxi; Xu Heliang; Chen Yongping
	2019
关键词	无
DOI	10.1117/12.2518378
英文摘要	Low noise silicon reach-through avalanche photodiodes are designed and implemented through 0.35 μm high voltage CMOS process. Seperated absorption charge multiplication (SACM) structure with vertical n++/p+/pi/p four layers is adopted. The light sensitive area of two different size element detectors is 200 μm and 500 μm in diameter, respectively. Regardless of the size of the light sensitive area, the typical reach-through voltage and the breakdown voltage for both element detectors is tested to be 60 V, and 172 V, respectively. The distribution of the breakdown voltage across the wafer is like a superposition of two Gaussian distributions of one peak at 168 V corresponding to the fewer detectors close to the rim and the other at 172 V corresponding to the most detectors in the center. The temperature coefficient of the breakdown voltage is tested down to be 0.32 V/K. The dark current at the gain M=100 is tested to be 50 pA and 500 pA for each detector. The responsive wavelength is 400-1100 nm. The peak responsivity of the 500 μm diameter detector is tested to be 57 A/W at 900 nm wavelength and with gain 100 to show the successful near infrared enhanced reponsivity. The excess noise factor is tested to be 3 - 4, much lower than those in the reported high voltage CMOS avalanche photodiodes. The yield is 100%. The devices are applied to a multiple-line Lidar to show the feasibility. Two 16×1 linear arrays of different pixel pitches are also designed and fabricated in the same way.
内容类型	会议论文
源URL	[http://202.127.2.71:8080/handle/181331/12334]
专题	上海技术物理研究所_上海技物所
推荐引用方式 GB/T 7714	Cheng Zhengxi,Xu Heliang,Chen Yongping. Design of low noise avalanche photodiode single element detectors and linear arrays through CMOS process[C]. 见:.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。