Controllable and Stable Quantized Conductance States in a Pt/HfOx/ITO Memristor

	Controllable and Stable Quantized Conductance States in a Pt/HfOx/ITO Memristor
	Xue, Wuhong ; Li, Yi ; Liu, Gang ; Wang, Zhuorui ; Xiao, Wen ; Jiang, Kemin ; Zhong, Zhicheng ; Gao, Shuang ; Ding, Jun ; Miao, Xiangshui
刊名	ADVANCED ELECTRONIC MATERIALS
关键词	LOGIC OPERATIONS MEMORY DEVICES TRANSPORT
DOI	10.1002/aelm.201901055
英文摘要	Controllable and Stable Quantized Conductance States in a Pt/HfOx/ITO Memristor
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/17839]
专题	2019专题
作者单位	1.Liu, G 2.Gao, S 3.Xu, XH (reprint author), Shanxi Normal Univ, Sch Chem & Mat Sci, Key Lab Magnet Mol & Magnet Informat Mat, Linfen 041004, Shanxi, Peoples R China. 4.Li, RW (reprint author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Prov Key Lab Magnet Mat & Applicat Techn, CAS Key Lab Magnet Mat & Devices, Ningbo 315201, Zhejiang, Peoples R China.
推荐引用方式 GB/T 7714	Xue, Wuhong,Li, Yi,Liu, Gang,et al. Controllable and Stable Quantized Conductance States in a Pt/HfOx/ITO Memristor[J]. ADVANCED ELECTRONIC MATERIALS.
APA	Xue, Wuhong.,Li, Yi.,Liu, Gang.,Wang, Zhuorui.,Xiao, Wen.,...&Li, Run-Wei.
MLA	Xue, Wuhong,et al."Controllable and Stable Quantized Conductance States in a Pt/HfOx/ITO Memristor".ADVANCED ELECTRONIC MATERIALS