The threshold voltage degradation of MOSFET in heavy-ion single event effect test | |
Zhang, Zeming2; Ma, Yingqi1; Li, Dan2; Tong, Chao2; Guo, Xiaoxiao2; Han, Jianwei1; Dang, Wei2 | |
2019 | |
会议日期 | May 16, 2018 - May 18, 2018 |
会议地点 | Beijing, China |
DOI | 10.1109/ICREED.2018.8905067 |
英文摘要 | A degradation is studied that the gate-source threshold voltage of BSS138BK N-channel MOSFET decreased dramatically in heavy-ion single event effect test. The comparative study is performed by laser test, total ionizing dose test and no-irradiation room temperature test. This case study illustrate the parameter degradation process, comparative test results and the analysis. © 2018 IEEE. |
会议录 | 2018 International Conference on Radiation Effects of Electronic Devices, ICREED 2018 |
语种 | 英语 |
ISBN号 | 9781538641354 |
内容类型 | 会议论文 |
源URL | [http://ir.nssc.ac.cn/handle/122/7272] |
专题 | 国家空间科学中心_空间技术部 |
作者单位 | 1.National Space Science Center, Chinese Academy of Sciences, Beijing; 100190, China 2.Technology and Engineering Centre for Space Utilization, Chinese Academy of Sciences, No.9 Dengzhuang, South Road, Beijing; 100094, China; |
推荐引用方式 GB/T 7714 | Zhang, Zeming,Ma, Yingqi,Li, Dan,et al. The threshold voltage degradation of MOSFET in heavy-ion single event effect test[C]. 见:. Beijing, China. May 16, 2018 - May 18, 2018. |
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