QQ客服 官方微博 反馈留言

	Semiconductor laser and method of fabricating same
	HATAKOSHI, GENICHI; ONOMURA, MASAAKI; RENNIE, JOHN; ISHIKAWA, MASAYUKI; NUNOUE, SHINYA; SUZUKI, MARIKO
	2000-02-29
著作权人	KABUSHIKI KAISHA TOSHIBA
专利号	US6031858
国家	美国
文献子类	授权发明
其他题名	Semiconductor laser and method of fabricating same
英文摘要	A semiconductor laser is disclosed, which realizes a continuous oscillation in a fundamental transverse mode at a low operating voltage by a transverse mode control. This semiconductor laser is fabricated by forming successively the following layers on a sapphire substrate 10 in the order an n-type GaN contact layer, an n-type GaAlN cladding layer 13, an MQW active layer 16, a p-type GaAlN cladding layer 19, wherein the laser comprises a double heterostructure including a ridge in the shape of a stripe formed in the cladding layer 19 and a light confining layer 20 formed in a region except the ridge portion of the cladding layer 19 on the double heterostructure, wherein a refractive index of the light confining layer 20 is larger than that of a p-type GaAlN cladding layer.
公开日期	2000-02-29
申请日期	1997-09-09
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83088]
专题	半导体激光器专利数据库
作者单位	KABUSHIKI KAISHA TOSHIBA
推荐引用方式 GB/T 7714	HATAKOSHI, GENICHI,ONOMURA, MASAAKI,RENNIE, JOHN,et al. Semiconductor laser and method of fabricating same. US6031858. 2000-02-29.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。