| Semiconductor laser | |
| KUBOTA MASAYUKI; TAKAMIYA SABURO | |
| 1987-08-31 | |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 专利号 | JP1987196889A |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To multiply an oscillating longitudinal mode without reducing the reflectivity of a laser light emitting end by precisely controlling the thickness of a clad layer to increase an internal loss. CONSTITUTION:The forbidden band width of a P-type GaAs substrate 1 or an N-type GaAs gap layer 7 is formed smaller than that of a P-type Ga1-yAlyAs layer 5 of an active layer, and the thickness of a P-type Ga1-xAlxAs clad layer 5 or an N-type Ga1-xAlxAs clad layer 10 is controlled to 1mum or less. Thus, part of a light extracted from the active layer at laser operation time is absorbed to the substrate 1 or the layer 7 to increase an internal loss. As a result, an oscillating longitudinal mode is multiplexed without reducing the reflectivity of the laser light emitting end face. |
| 公开日期 | 1987-08-31 |
| 申请日期 | 1986-02-24 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83070]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KUBOTA MASAYUKI,TAKAMIYA SABURO. Semiconductor laser. JP1987196889A. 1987-08-31. |
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