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	Semiconductor laser device
	MATSUI KANEKI; TANETANI MOTOTAKA; YAMAGUCHI MASAHIRO; MORIMOTO TAIJI; MATSUMOTO AKIHIRO; KANEIWA SHINJI
	1988-09-19
著作权人	SHARP CORP
专利号	JP1988224387A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To stably operate a high output for a long period by forming a current injecting region in a discontinuous injecting region near the end face of resonance. CONSTITUTION:A V-shaped groove 19 is formed at the center of an n-type GaAs current blocking layer 12, and a p-type GaAlAs clad layer 13 of upper layer is contacted with a p-type GaAs substrate 11 of lower layer. That is, a current flows to an active layer 14 in a stripelike region provided with the groove 19. A plurality of grooves 22 are formed at near the end faces 20, 21 of a resonator, the layer 12 is buried, and since the layer 13 is not contacted with the substrate 11 in the region of the groove 22, it can block a current to the layer 14 Thus, since the density of injecting current to the layer 14 located near the end face of resonance is reduced as compared with the center of the resonator, heat generation near the end face is suppressed at the time of operating at a high output, and an oversaturation absorber effect does not occur.
公开日期	1988-09-19
申请日期	1987-03-13
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83050]
专题	半导体激光器专利数据库
作者单位	SHARP CORP
推荐引用方式 GB/T 7714	MATSUI KANEKI,TANETANI MOTOTAKA,YAMAGUCHI MASAHIRO,et al. Semiconductor laser device. JP1988224387A. 1988-09-19.

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