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	Optical semiconductor element
	SODA HARUHISA
	1991-12-16
著作权人	FUJITSU LTD
专利号	JP1991284891A
国家	日本
文献子类	发明申请
其他题名	Optical semiconductor element
英文摘要	PURPOSE:To perform integration of modulators allowing superhigh-frequency modulation with low voltage by constituting an optical absorbing amount of MQW of wavelength having exciton wavelength and an optical waveguide layer of MQW of wavelength, whose exciton wavelength is longer than the above. CONSTITUTION:For instance, a GaInAs waveguide layer 3 of composition 3mum is provided on an InP substrate 1, and a grating 2 is formed in the laser part at the interface both of them. In a modulator part, an MQW layer 23 consisting of a GaInAs layer having the thickness 70Angstrom is provided, for instance, on the ten-layered waveguide layer 3. Each layer generates a level corresponding to exciton wavelength of 53mum. And, the thickness of a non-doped InP host layer 24 between the respective MQW layers is made 100Angstrom . On the other hand, in the laser part, the GaInAs layer consisting of MQW 23' shall have its constitution the same with the MQW layer 23 of the modulator part and the number of layers shall be equally ten-layered while the thickness of each layer shall be thickened to 120Angstrom . Thereby, the exciton wavelength of each layer becomes 55m. A p-InP clad layer 5, a cap layer 12 of p-GaInAsP and a positive electrode 13 are provided on the upper part of both MQW construction.
公开日期	1991-12-16
申请日期	1990-03-30
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83018]
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	SODA HARUHISA. Optical semiconductor element. JP1991284891A. 1991-12-16.

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