Semiconductor laser | |
HAYASHI HIROSHI; YAMAMOTO OSAMU; MIYAUCHI NOBUYUKI; YAMAMOTO SABURO | |
1987-07-28 | |
著作权人 | SHARP CORP |
专利号 | JP1987171183A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser |
英文摘要 | PURPOSE:To improve internal current constriction in a projection section by forming at least two p-n junctions connected in series to the projecting section in a region, in which a groove is not shaped, on a substrate with the projecting section. CONSTITUTION:An n-GaAs layer 18 (an AlGaAs layer may also be used) in 0.8mum and a p-GaAs layer 19 in 0.1mum are grown onto a p-GaAs base body 12' as first growth. A projecting section 1 in 10mum width and 2mum height is shaped in the direction through photoetching on the wafer. The p-GaAs base body 12' is exposed with the exception of the projecting section 11 through etching. Second growth is conducted, and n-GaAs 12'' is grown. Thin n-GaAS is also deposited on the projecting section 11 at that time. A groove 17 is formed in the > direction so as to cross the projecting section 1 A clad layer 13, an active layer 14, a clad layer 15 and a cap layer 16 are deposited in succession through third growth, thus constituting an interference type laser. |
公开日期 | 1987-07-28 |
申请日期 | 1986-01-22 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/83007] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | SHARP CORP |
推荐引用方式 GB/T 7714 | HAYASHI HIROSHI,YAMAMOTO OSAMU,MIYAUCHI NOBUYUKI,et al. Semiconductor laser. JP1987171183A. 1987-07-28. |
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