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	Semiconductor laser
	HAYASHI HIROSHI; YAMAMOTO OSAMU; MIYAUCHI NOBUYUKI; YAMAMOTO SABURO
	1987-07-28
著作权人	SHARP CORP
专利号	JP1987171183A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To improve internal current constriction in a projection section by forming at least two p-n junctions connected in series to the projecting section in a region, in which a groove is not shaped, on a substrate with the projecting section. CONSTITUTION:An n-GaAs layer 18 (an AlGaAs layer may also be used) in 0.8mum and a p-GaAs layer 19 in 0.1mum are grown onto a p-GaAs base body 12' as first growth. A projecting section 1 in 10mum width and 2mum height is shaped in the direction through photoetching on the wafer. The p-GaAs base body 12' is exposed with the exception of the projecting section 11 through etching. Second growth is conducted, and n-GaAs 12'' is grown. Thin n-GaAS is also deposited on the projecting section 11 at that time. A groove 17 is formed in the > direction so as to cross the projecting section 1 A clad layer 13, an active layer 14, a clad layer 15 and a cap layer 16 are deposited in succession through third growth, thus constituting an interference type laser.
公开日期	1987-07-28
申请日期	1986-01-22
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83007]
专题	半导体激光器专利数据库
作者单位	SHARP CORP
推荐引用方式 GB/T 7714	HAYASHI HIROSHI,YAMAMOTO OSAMU,MIYAUCHI NOBUYUKI,et al. Semiconductor laser. JP1987171183A. 1987-07-28.

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