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	Semiconductor laser
	KAWANO HIDEO
	1992-03-12
著作权人	NEC CORP
专利号	JP1992078184A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To realize effective current constriction and to enable basic transverse mode oscillation at high output by forming an active layer between first and second conductivity clad layers, by providing a first semiconductor layer of first conductivity type whose refraction factor is larger than that of the active layer to a stripe-shaped mesa side part and an outside, and by providing a second conductivity-type Ga0.5In0.5 P layer to an upper part of the mesa and all over an upper surface of the first semiconductor layer. CONSTITUTION:Etching is carried out to the middle of a p-(Al0.6Ga0.4)0.5In0.5P clad layer 15 using concentrated sulfuric acid solution. Thereafter, an n-GaAs current constriction layer 17 is selectively formed on both slants and both flat parts of a mesa part 16 excepting a stripe-shaped SiO2 film mask by second MOVPE growth. After the SiO2 film mask is removed, a p-Ga0.5In0.5P contact layer 18 and a p-GaAs contact layer 19 are formed one by one all over an upper surface through third MOVPE growth. A laser wafer is completed by forming a p-side electrode 20 on a contact layer 19 and an n-side electrode 21 on an n-GaAs substrate 1
公开日期	1992-03-12
申请日期	1990-07-19
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/82187]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	KAWANO HIDEO. Semiconductor laser. JP1992078184A. 1992-03-12.

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