QQ客服 官方微博 反馈留言

	Semiconductor laser device
	OOTA YOICHIRO; TANAKA TOSHIO; TAKAMIYA SABURO
	1987-10-08
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1987229893A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To prevent deterioration of each required layer, such as oxidation. during the manufacturing of a laser device, by providing an etching control layer, etching a current blocking layer, removing the etching control layer, and forming a stripe shaped groove. CONSTITUTION:On a P-type GaAs substrate 1, an AlxGa1-xAs etching control layer 2 and an N-type GaAs current blocking layer 3 are sequentially grown by using an MO-CVD method. By using an etching mask 11, only the N-type GaAs current blocking layer 3 is etched with a selective etching liquid, by which GaAs is etched farther than AlGaAs. Thus a groove is formed. The mask 11 is removed. The etching control layer 2, which is exposed at the bottom part of the groove is removed by using an appropriate etching liquid. The chemically stable GaAs substrate 1 is exposed at the bottom part of the groove. Thus a stripe shaped groove 10 is formed. Required layers 4, 5, 6 and 7 are epitaxially grown by using the MO-CVD method.
公开日期	1987-10-08
申请日期	1986-03-11
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/82089]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	OOTA YOICHIRO,TANAKA TOSHIO,TAKAMIYA SABURO. Semiconductor laser device. JP1987229893A. 1987-10-08.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。