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	Semiconductor laser element
	IJICHI TETSURO; OKAMOTO HIROSHI
	1991-07-18
著作权人	古河電気工業株式会社
专利号	JP1991166785A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser element
英文摘要	PURPOSE:To make it possible to obtain a long life distortion quantum well semiconductor laser element by placing a specific stress relaxation layer between an active layer and upper and lower clad layers which adjoin said active layer. CONSTITUTION:An InXGa1-XAs layer is adopted as a quantum well layer. An active layer 14 which adopts GaAs as a buffer layer and clad layers 13 and 15 which are to be laid out in the upper and lower parts of this active layer 14 are formed on a GaAs substrate 11 by epitaxial growth. Stress relaxation layers 17 and 18 which comprise In1-ZGaZP (Z>0.51) are placed between the upper and lower clad layers 13 and 15 which adjoin the active layer 14 and the active layer 14 in the case of conductor laser elements. This construction substantially eliminates stress on the interface between the substrate 11 and the epitaxial growth layer and is capable of inhibiting the generation of transition on the interface. It is, therefore, possible to obtain a distortion quantum well semiconductor element having longer lifetime.
公开日期	1991-07-18
申请日期	1989-11-27
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/82037]
专题	半导体激光器专利数据库
作者单位	古河電気工業株式会社
推荐引用方式 GB/T 7714	IJICHI TETSURO,OKAMOTO HIROSHI. Semiconductor laser element. JP1991166785A. 1991-07-18.

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