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	Semiconductor laser
	BETTIATI, MAURO; STARCK, CHRISTOPHE; LOVISA, STEPHANE
	2004-10-19
著作权人	OCLARO (NORTH AMERICA), INC.
专利号	US6807212
国家	美国
文献子类	授权发明
其他题名	Semiconductor laser
英文摘要	The present invention provides a vertical structure semiconductor laser comprising bottom and top cladding layers (1, 2), a light guide (G) superposed on the bottom cladding layer, and a semiconductor active layer (CA). In the invention, the light guide (G) further comprises:a semiconductor bottom guide layer (11) having the following two adjacent bottom parts:an undoped first bottom part (11a) adjacent the central region, andan n-type doped second bottom part (11b) adjacent the bottom cladding layer,a semiconductor top guide layer (12) having the following two adjacent top parts:an undoped first top part (12a) adjacent the central region, anda p-type doped second top part (12b) adjacent the top cladding layer.The first bottom and top parts form a non-doped region (ND) more than 0.5 mum thick, and the refractive index difference (Deltanopt) between one or each of the cladding layers and the adjacent guide layer is less than 0.02.
公开日期	2004-10-19
申请日期	2002-10-30
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/81953]
专题	半导体激光器专利数据库
作者单位	OCLARO (NORTH AMERICA), INC.
推荐引用方式 GB/T 7714	BETTIATI, MAURO,STARCK, CHRISTOPHE,LOVISA, STEPHANE. Semiconductor laser. US6807212. 2004-10-19.

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