Semiconductor laser | |
BETTIATI, MAURO; STARCK, CHRISTOPHE; LOVISA, STEPHANE | |
2004-10-19 | |
著作权人 | OCLARO (NORTH AMERICA), INC. |
专利号 | US6807212 |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Semiconductor laser |
英文摘要 | The present invention provides a vertical structure semiconductor laser comprising bottom and top cladding layers (1, 2), a light guide (G) superposed on the bottom cladding layer, and a semiconductor active layer (CA). In the invention, the light guide (G) further comprises:a semiconductor bottom guide layer (11) having the following two adjacent bottom parts:an undoped first bottom part (11a) adjacent the central region, andan n-type doped second bottom part (11b) adjacent the bottom cladding layer,a semiconductor top guide layer (12) having the following two adjacent top parts:an undoped first top part (12a) adjacent the central region, anda p-type doped second top part (12b) adjacent the top cladding layer.The first bottom and top parts form a non-doped region (ND) more than 0.5 mum thick, and the refractive index difference (Deltanopt) between one or each of the cladding layers and the adjacent guide layer is less than 0.02. |
公开日期 | 2004-10-19 |
申请日期 | 2002-10-30 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/81953] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | OCLARO (NORTH AMERICA), INC. |
推荐引用方式 GB/T 7714 | BETTIATI, MAURO,STARCK, CHRISTOPHE,LOVISA, STEPHANE. Semiconductor laser. US6807212. 2004-10-19. |
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